• Telephone0086-0577-62698923
  • E-mailsales@huimultd.com
  • AddressNo.266 Liujiang Road, Wenzhou, Zhejiang, China



IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device. IGBT is composed of BJT and MOSFET, with the advantages of high input impedance of MOSFET and low on-state voltage drop of GTR (Giant Transistor, or Power BJT). Suitable for converter systems with DC voltages above 600V, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.